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DMN55D0UT
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
* * * * * * * Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate to 2kV Lead Free/RoHS Compliant (Note 3) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
* * * * * * * * *
SOT-523
NEW PRODUCT
Case: SOT-523 Case Material: Molded Plastic, "Green" Molding Compound, Note 6. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.002 grams (approximate)
Drain
D
Gate
ESD PROTECTED, 2kV
TOP VIEW
Gate Protection Diode
Source
G
TOP VIEW
S
Equivalent Circuit
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VDSS VGSS ID IDM Value 50 12 160 560 Units V V mA mA
Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 1)
Continuous
Thermal Characteristics
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Value 200 625 -55 to +150 Units mW C/W C
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
Notes: 1. 2. 3. 4.
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss Min 50 0.7 180 Typ 0.8 3.1 4 25 5 2.1 Max 10 1.0
5.0
Unit V A A V mS pF pF pF
Test Condition VGS = 0V, ID = 250A VDS = 50V, VGS = 0V VGS = 8V, VDS = 0V VGS = 12V, VDS = 0V VDS = VGS, ID = 250A VGS = 4V, ID = 100mA VGS = 2.5V, ID = 80mA VDS = 10V, ID = 100mA, f = 1.0KHz
1.0 4 5
VDS = 10V, VGS = 0V, f = 1.0MHz
Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Short duration pulse test used to minimize self-heating effect. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN55D0UT
Document number: DS31330 Rev. 3 - 2
1 of 4 www.diodes.com
March 2008
(c) Diodes Incorporated
DMN55D0UT
0.8 0.7 0.6 0.5
VGS = 3.0V VGS = 10V
0.5
VDS = 10V
0.4 ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 4.5V
TA = 85C TA = 25C
0.3
TA = -55C
TA = 150C TA = 125C
NEW PRODUCT
0.4 0.3 0.2 0.1 0 0 0.5 1
VGS = 1.5V VGS = 1.0V VGS = 2.5V
0.2
0.1
0
5
1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
0
1 2 3 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics
4
10 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
10
TA = 150C TA = 125C TA = 85C
VGS = 2.5V
TA = 25C
VGS = 4.0V
TA = -55C
1 0.001
1 0 0.2 0.3 0.4 0.5 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.1
0.01 0.1 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage
1
2.0 1.8 RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50
VGS = 4V ID = 100mA
35 30 C, CAPACITANCE (pF) 25 20
f = 1MHz
Ciss
VGS = 2.5V ID = 80mA
15 10 5 0 0
VGS = 0V
Coss Crss
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature
5
10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance
40
DMN55D0UT
Document number: DS31330 Rev. 3 - 2
2 of 4 www.diodes.com
March 2008
(c) Diodes Incorporated
DMN55D0UT
1.1 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.0
1
IS, SOURCE CURRENT (A)
0.1
0.9
ID = 250A
TA = 150C
NEW PRODUCT
0.8
0.01
TA = 125C TA = 85C
0.7
0.001
TA = 25C T A = -55C
0.6
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0.5 -50
0.0001 0.1
0.3 0.5 0.7 0.9 1.1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3 D = 0.9
0.1
D = 0.1 D = 0.05 D = 0.02 D = 0.01
RJA(t) = r(t) * RJA RJA = 625C/W P(pk)
0.01
D = 0.005 D = Single Pulse
t1
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2
0.001 0.000001
0.00001
0.0001
0.001 0.01 0.1 t1, PULSE DURATION TIME (s) Fig. 9 Transient Thermal Response
1
10
100
Ordering Information
Part Number DMN55D0UT -7
Notes:
(Note 5) Case SOT-523 Packaging 3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
NAC = Product Type Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September
NAC
Date Code Key Year Code Month Code Jan 1
YM
2007 U Feb 2 Mar 3
2008 V Apr 4 May 5
2009 W Jun 6 Jul 7
2010 X Aug 8 Sep 9
2011 Y Oct O Nov N
2012 Z Dec D March 2008
(c) Diodes Incorporated
DMN55D0UT
Document number: DS31330 Rev. 3 - 2
3 of 4 www.diodes.com
DMN55D0UT Package Outline Dimensions
A
TOP VIEW
BC
NEW PRODUCT
G H K N J M
D
L
SOT-523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0 8 All Dimensions in mm
Suggested Pad Layout
Y Z C
Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7
X
E
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DMN55D0UT
Document number: DS31330 Rev. 3 - 2
4 of 4 www.diodes.com
March 2008
(c) Diodes Incorporated

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